aluminum oxide polishing paste

When the prepared aluminum oxide polishing solution performs polishing at a pH of 9.5-10.5, a higher friction coefficient and polishing efficiency can be achieved. It may achieve a polishing efficiency of pH=13.00 by using the aluminum oxide polishing solution of the present disclosure; meanwhile, less scratches will occur to a polishing disc. 201610445394.0, filed on Jun. Preferably, in step 1), the temperature for mixing is 75-85 C. The mixing in step 1) may adopt a common method in the prior art for mixing such that various constituents are evenly mixed.

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Pastas de polimento base de xido de alumnio de granulao 60 microns (pasta UNO) e 20 microns (pasta DUE). After each time the polishing ends, the polishing mat was repaired for 5 minutes using a 4-inch diamond repair disc. The methods include: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95 C. and 110 C., adding the hydrolysate into aluminum oxide powder; keeping stirring while heating till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water; adjusting solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. consumable polishing die speedfam paste 201610445394.0, dated Jun. Make up a solution using 15 g silane coupling agent KH792 also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 77 g ethyl alcohol, 8 g water; at a constant temperature of 85 C., stir and hydrolyze to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 105 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 10.50 using 2 mol/L potassium hydroxide; continue stirring for 1 hour to obtain a 7 wt % aluminum oxide polishing solution. 1.

Owner name: diamond aci polishing paste acii syringe gm vendor quantity fgm order minimum enter larger In the present disclosure, there is further disclosed an aluminum oxide polishing solution, prepared according to the method above.

electrolytic etching, With simultaneous mechanical treatment, e.g.

75ml pulido varianta mramor kovy istic metalen Dispense pequena quantidade da pasta na superfcie a ser polida. Make up a solution using 25 g silane coupling agent KH792 also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 67 g ethyl alcohol, 8 g water; at a constant temperature of 75 C., stir and hydrolyze to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 95 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 9.50 using 2 mol/L potassium hydroxide; continue stirring for 1 hour to obtain a 3 wt % aluminum oxide polishing solution. The surface quality condition of the polished sapphire sheet was observed with an atomic force microscope. Besides the special method, equipment, and material used in the embodiments, according to knowledge in the art known well to the skilled person and to the disclosure of the present invention, any method, equipment and material in the prior art similar or equivalent to the method, equipment, and material in the embodiments of the present disclosure may also be used to implement the present disclosure. 2016104453940, dated Jun.

polishing alumina oxide compounds misumi trusco nakayama pastes buffing days ec fs In order to achieve the above and other objectives, the present disclosure is implemented through a technical solution below: A method for preparing an aluminum oxide polishing solution, comprising: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95 C. and 110 C., adding the hydrolysate into aluminum oxide powder, keeping stirring while heating, till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water, and adjusting the solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. 29, 2017, 15 pages.

Make up a solution using 4 g silane coupling agent KH792 (also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 14.4 g ethyl alcohol, and 1.6 g water; at a constant temperature of 80 C., stir and hydrolyze for half an hour to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 100 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 13.00 using 2 mol/L potassium hydroxide; continue stirring for 1 hour to obtain a 5 wt % aluminum oxide polishing solution. oxide shofu

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MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM. Take aluminum oxide powder with a particle size of 40 nm, disperse it into a water solution by stirring; obtain an aluminum oxide concentration of 5 wt %; regulate a pH=10.00 aluminum oxide dispersion solution using 2 mol/L KOH solution.

Preferably, in step 1), the time for mixing is 20 min above.

cosmedent luster unsurpassed Hereinafter, the examples of the present disclosure will be illustrated in detail.

Meanwhile, less scratches occur to the polishing disc, thereby greatly reducing damages to the machine stand. The present disclosure relates to a field of a polishing solution, and specifically relates to a method of preparing an aluminum oxide polishing solution.

SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION, ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANG, WEILEI;LIU, WEILI;SONG, ZHITANG;SIGNING DATES FROM 20160815 TO 20160816;REEL/FRAME:039483/0391, SHANGHAI XINANNA ELECTRONIC TECHNOLOGY CO., LTD, C, MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.

20g impregnated minimum Preferably, in step 3), the solution pH is adjusted using sodium hydroxide or potassium hydroxide water solution.

The examples are implemented under the precondition of the technical solution of the present disclosure and provide detailed embodiments and specific operation procedures; however, the protection scope of the present disclosure is not limited to the examples below.

schedule lapping paste oxide aluminium kemet powders abrasive lapping Embodiments of the present disclosure provides a method of preparing a highly-efficient low-alkalinity aluminum oxide polishing solution, which performs a modification treatment to the aluminum oxide, such that a surface nature of the modified aluminum oxide is changed and its friction coefficient is raised. The quality difference of the sapphire sheet before and after polishing was measured to represent the polishing speed. The polishing parameters are provided below: the polishing mat uses SUBA 600; the polishing pressure was 6 psi; the rotation speed of the polishing mat was 100 rpm; the rotation speed of the polished wafer was 90 rpm; the flow rate of the polishing solution was 125 ml/min; the polishing time was 30 min. As shown in the Examples and effect data that when other conditions were all identical, the polishing solution formed by the modified aluminum oxide in the present disclosure at a pH=10 may achieve the polishing effect and polishing rate that were achieved by a normal aluminum oxide polishing solution at a pH=13; therefore, the present disclosure greatly enhances the productivity efficiency, and avoids damaging a machine stand by a high-pH value polishing solution; therefore, the present disclosure facilitates mass industrial production. Make up a solution using 20 g silane coupling agent KH792 also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 77 g ethyl alcohol, 3 g water; at a constant temperature of 75 C., stir and hydrolyze for half an hour to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 102 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 10.10 using 2 mol/L potassium hydroxide; continue stirring to obtain a 6 wt % aluminum oxide polishing solution.

Preferably, in step 1), a stirring mixing manner is employed for stirring.

fgm dandal blade Co., Ltd. First Office Action (including English translation) issued in corresponding Chinese Patent Application No.

Indicaes: Seque a superfcie a ser polida, mantendo os dentes isolados (isolamento relativo). ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANG, WEILEI;LIU, WEILI;SONG, ZHITANG;SIGNING DATES FROM 20160815 TO 20160816;REEL/FRAME:039483/0391, Owner name:

23, 2017, 11 pages. Preferably, in step 2), particle sizes of the aluminum oxide powder is ranging from 0.04 to 2 m. alumina

First Search (including English translation) issued in corresponding Chinese Patent Application No.

lapping In the present disclosure, there is further disclosed usage of the aluminum oxide polishing solution in the field of sapphire wafer polishing. In this way, the friction force when the modified aluminum oxide is applied to a polishing solution will increase, which accelerates the friction speed. Remova a tampa da seringa e acople a ponteira aplicadora. ); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY, Comparison Results of Polishing Experiments, A kind of preparation method of alumina polishing solution, Quaternized spherical alpha-alumina @ gamma-alumina composite abrasive particle and preparation method thereof, Flexible bonded abrasive articles, methods of production and use, Surface-modified pyrogenically produced aluminum oxide, Polishing material composition and polishing method for polishing LSI devices, LSI device polishing composition and method for reproducing LSI device, Silane containing polishing composition for CMP, Method for coating metal surfaces with an aqueous, polymer-containing composition, said aqueous composition and the use of the coated substrates, Method for coating metallic surfaces with an aqueous composition, the aqueos composition and use of the coated substrates, Cerium-based abrasive abrasive and abrasive material slurry, and method for producing cerium based abrasive material, Granules based on pyrogenically produced aluminium oxide, their production process and use, Aqueous base nano diamond polishing liquid and manufacture method thereof, Bristle material for polishing brush and polishing brush, Abrasive grain for polishing material, and polishing material, Abrasive tool including agglomerate particles and an elastomer, and related methods, Compositions comprising silane modified metal oxides, Nanometer polishing solution used for microcrystalline glass and preparation method thereof, Surface modified nano-abrasive silicon slice polishing liquid, Composition and method for polishing molybdenum, Method for culturing oil-producing microalgae by using brewery sewage, Linear nano silica sol and preparation method thereof, Chemically mechanical polishing solution containing composite milling material, Alumina-based chemical mechanical polishing slurry, Method for preparing alumina polishing solution, Cerium-based abrasive material and abrasive material slurry, and method for producing cerium based abrasive material, Silicon wafer with grinding composition and silicon wafer grinding method, Cerium oxide abrasive and method for polishing substrate, Composition for polishing and polishing method, Polydisperse large-particle-size silica sol and method of preparing the same, Method for manufacturing polishing slurry excellent in distribution stability, Cmp abrasive, and polishing method using the same, Abrasive grain and method for producing abrasive, A slurry for color photoresist planarization, Cmp polishing liquid and polishing method using the same and fabricating method of semiconductor substrate, Polishing composite-oxide particle and slurry abrasive, Sapphire chemical mechanical polishing solution and preparation method thereof, A kind of preparation method of CMP planarization liquid, Abrasive and method for polishing substrate, Polishing composition for polishing semiconductor wafer edge, and polishing machining method, Method for preparing cerium oxide for high-accurate polishing, A polishing composition for polishing a wafer edge, a method for manufacturing the same, and a polishing method, A kind of SiC single crystal piece essence throwing water base polishing fluid and preparation method thereof, Polishing slurry for oxide single crystal substrate and method for producing the same.

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